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| MMBT8099LT1 Preferred Device Amplifier Transistor NPN Silicon Features * Pb-Free Package is Available MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current - Continuous Symbol VCEO VCBO VEBO IC Value 80 80 6.0 500 Unit Vdc Vdc Vdc mAdc http://onsemi.com COLLECTOR 3 1 BASE 2 EMITTER THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR-5 Board (Note 1) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 1) Total Device Dissipation Alumina Substrate (Note 2) TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient (Note 2) Junction and Storage Temperature Range Symbol PD 225 1.8 RqJA PD 300 2.4 RqJA TJ, Tstg 417 -55 to +150 mW mW/C C/W C KB M G G 1 KB = Specific Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. 556 mW mW/C C/W Max Unit 1 2 3 SOT-23 (TO-236) CASE 318 STYLE 6 MARKING DIAGRAM Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. FR-5 = 1.0 X 0.75 X 0.062 in. 2. Alumina = 0.4 X 0.3 X 0.024 in. 99.5% alumina. ORDERING INFORMATION Device MMBT8099LT1 MMBT8099LT1G Package SOT-23 SOT-23 (Pb-Free) Shipping 3000/Tape & Reel 3000/Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. (c) Semiconductor Components Industries, LLC, 2006 1 January, 2006 - Rev. 1 Publication Order Number: MMBT8099LT1/D MMBT8099LT1 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector -Emitter Breakdown Voltage (Note 3) (IC = 10 mAdc, IB = 0) Collector -Base Breakdown Voltage (IC = 100 mAdc, IE = 0) Emitter -Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 60 Vdc, IB = 0) Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) (VEB = 4.0 Vdc, IC = 0) ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) (IC = 100 mAdc, VCE = 5.0 Vdc) Collector -Emitter Saturation Voltage (IC = 100 mAdc, IB = 5.0 mAdc) (IC = 100 mAdc, IB = 10 mAdc) Base-Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc) SMALL- SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = 10 mAdc, VCE = 5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz) 3. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. fT 150 Cobo - Cibo - 25 6.0 pF - pF MHz hFE 100 100 75 VCE(sat) - - VBE(on) - 0.6 - 0.8 0.4 0.3 Vdc 300 - - Vdc - V(BR)CEO 80 V(BR)CBO 80 V(BR)EBO 6.0 ICES - ICBO - - IEBO - - 0.1 - 0.1 - mAdc 0.1 mAdc - mAdc - Vdc - Vdc Vdc Symbol Min Max Unit http://onsemi.com 2 MMBT8099LT1 TURN-ON TIME -1.0 V VCC +40 V RL OUTPUT Vin 0 tr = 3.0 ns 5.0 mF 100 5.0 ms tr = 3.0 ns *Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities RB * CS t 6.0 pF Vin 5.0 mF 100 RB * CS t 6.0 pF TURN-OFF TIME +VBB VCC +40 V 100 RL OUTPUT 5.0 ms +10 V 100 Figure 1. Switching Time Test Circuits f T , CURRENT-GAIN - BANDWIDTH PRODUCT (MHz 300 TJ = 25C 200 VCE = 1.0 V 100 70 50 30 C, CAPACITANCE (pF) 5.0 V 40 TJ = 25C 20 Cibo 10 8.0 6.0 4.0 2.0 Cobo 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 2. Current-Gain - Bandwidth Product Figure 3. Capacitance 300 t, TIME (ns) 200 100 70 50 30 20 I C , COLLECTOR CURRENT (mA) 1.0 k 700 500 VCC = 40 V IC/IB = 10 IB1 = IB2 TJ = 25C ts 1.0 k 700 500 300 200 100 70 50 30 20 10 tf CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT DUTY CYCLE 10% td @ VBE(off) = 0.5 V 10 10 20 30 50 70 100 tr 200 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 4. Switching Times Figure 5. Active-Region Safe Operating Area http://onsemi.com 3 MMBT8099LT1 400 TJ = 125C h FE , DC CURRENT GAIN 200 -55C V, VOLTAGE (VOLTS) 25C 1.0 TJ = 25C VBE(sat) @ IC/IB = 10 VBE @ VCE = 5.0 V 0.8 0.6 100 80 60 40 VCE = 5.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.2 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 0.5 1.0 2.0 5.0 10 20 50 100 200 IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 6. DC Current Gain Figure 7. "ON" Voltages VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) TJ = 25C IC = 20 mA IC = 50 mA IC = 100 mA IC = 200 mA R qVB , TEMPERATURE COEFFICIENT (mV/ C) 2.0 -1.0 1.6 -1.4 1.2 -1.8 RqVB FOR VBE -2.2 -55C TO 125C 0.8 0.4 IC = 10 mA 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 -2.6 -3.0 0 0.02 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 IB, BASE CURRENT (mA) IC, COLLECTOR CURRENT (mA) Figure 8. Collector Saturation Region Figure 9. Base-Emitter Temperature Coefficient r(t), NORMALIZED TRANSIENT THERMAL RESISTANCE 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 D = 0.5 0.2 0.1 0.05 SINGLE PULSE 0.02 0.01 P(pk) t1 SINGLE PULSE t2 DUTY CYCLE, D = t1/t2 1.0 2.0 5.0 10 20 50 100 200 t, TIME (ms) 500 1.0 k 2.0 k 5.0 k ZqJC(t) = r(t) * RqJC TJ(pk) - TC = P(pk) ZqJC(t) ZqJA(t) = r(t) * RqJA TJ(pk) - TA = P(pk) ZqJA(t) D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN469) 10 k 20 k 50 k 100 k Figure 10. Thermal Response http://onsemi.com 4 MMBT8099LT1 PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AN D 3 SEE VIEW C E 1 2 HE c b e q 0.25 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318-01 THRU -07 AND -09 OBSOLETE, NEW STANDARD 318-08. MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 A L A1 L1 VIEW C DIM A A1 b c D E e L L1 HE MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: N. American Technical Support: 800-282-9855 Toll Free Literature Distribution Center for ON Semiconductor USA/Canada P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Phone: 81-3-5773-3850 Email: orderlit@onsemi.com ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 5 MMBT8099LT1/D |
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